K. W. Lee, J.-C. Bea, T. Fukushima, Yuki Ohara, T. Tanaka, Mitsumasa Koyanagi. High reliable and fine size of 5-μm diameter backside Cu through-silicon Via(TSV) for high reliability and high-end 3-D LSIs. In Mitsumasa Koyanagi, Morihiro Kada, editors, 2011 IEEE International 3D Systems Integration Conference (3DIC), Osaka, Japan, January 31 - February 2, 2012. pages 1-4, IEEE, 2011. [doi]
@inproceedings{LeeBFOTK11,
title = {High reliable and fine size of 5-μm diameter backside Cu through-silicon Via(TSV) for high reliability and high-end 3-D LSIs},
author = {K. W. Lee and J.-C. Bea and T. Fukushima and Yuki Ohara and T. Tanaka and Mitsumasa Koyanagi},
year = {2011},
doi = {10.1109/3DIC.2012.6262975},
url = {http://dx.doi.org/10.1109/3DIC.2012.6262975},
researchr = {https://researchr.org/publication/LeeBFOTK11},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2011 IEEE International 3D Systems Integration Conference (3DIC), Osaka, Japan, January 31 - February 2, 2012},
editor = {Mitsumasa Koyanagi and Morihiro Kada},
publisher = {IEEE},
isbn = {978-1-4673-2189-1},
}