High reliable and fine size of 5-μm diameter backside Cu through-silicon Via(TSV) for high reliability and high-end 3-D LSIs

K. W. Lee, J.-C. Bea, T. Fukushima, Yuki Ohara, T. Tanaka, Mitsumasa Koyanagi. High reliable and fine size of 5-μm diameter backside Cu through-silicon Via(TSV) for high reliability and high-end 3-D LSIs. In Mitsumasa Koyanagi, Morihiro Kada, editors, 2011 IEEE International 3D Systems Integration Conference (3DIC), Osaka, Japan, January 31 - February 2, 2012. pages 1-4, IEEE, 2011. [doi]

Abstract

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