J. Y. Lee, F. S. Chang, K.-Y. Hsiang, P. H. Chen, Z.-F. Luo, Z. X. Li, J. H. Tsai, C. W. Liu, M. H. Lee. 3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
@inproceedings{LeeCHCLLTLL23,
title = {3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs},
author = {J. Y. Lee and F. S. Chang and K.-Y. Hsiang and P. H. Chen and Z.-F. Luo and Z. X. Li and J. H. Tsai and C. W. Liu and M. H. Lee},
year = {2023},
doi = {10.23919/VLSITechnologyandCir57934.2023.10185163},
url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185163},
researchr = {https://researchr.org/publication/LeeCHCLLTLL23},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
publisher = {IEEE},
isbn = {978-4-86348-806-9},
}