Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee, Yeonho Lee, Jae Hyung Park, Su-Hyun Oh, Yucheon Ju, Chunseok Jeong, Ho Sung Cho, Jaeseung Lee, Tae Sik Yun, Jin-Hee Cho, Sangmuk Oh, Junil Moon, Young-Jun Park, Hong-Seok Choi, In-Keun Kim, Seung-Min Yang, Sun-Yeol Kim, Jaemin Jang, Jinwook Kim, Seong-Hee Lee, Younghyun Jeon, Juhyung Park, Tae-Kyun Kim, Dongyoon Ka, Sanghoon Oh, Jinse Kim, Junyeol Jeon, Seonhong Kim, Kyeong Tae Kim, Taeho Kim, Hyeonjin Yang, Dongju Yang, Minseop Lee, Heewoong Song, Dongwook Jang, Junghyun Shin, Hyunsik Kim, Chang-Ki Baek, Hajun Jeong, Jongchan Yoon, Seung-Kyun Lim, Kyo Yun Lee, Young Jun Koo, Myeong-Jae Park, Joohwan Cho, Jonghwan Kim. 13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization. In IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024. pages 238-240, IEEE, 2024. [doi]
@inproceedings{LeeCLLPOJJCLYCOMPCKYKJKLJPKKOKJKKKYYL24,
title = {13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization},
author = {Jinhyung Lee and Kyungjun Cho and Chang Kwon Lee and Yeonho Lee and Jae Hyung Park and Su-Hyun Oh and Yucheon Ju and Chunseok Jeong and Ho Sung Cho and Jaeseung Lee and Tae Sik Yun and Jin-Hee Cho and Sangmuk Oh and Junil Moon and Young-Jun Park and Hong-Seok Choi and In-Keun Kim and Seung-Min Yang and Sun-Yeol Kim and Jaemin Jang and Jinwook Kim and Seong-Hee Lee and Younghyun Jeon and Juhyung Park and Tae-Kyun Kim and Dongyoon Ka and Sanghoon Oh and Jinse Kim and Junyeol Jeon and Seonhong Kim and Kyeong Tae Kim and Taeho Kim and Hyeonjin Yang and Dongju Yang and Minseop Lee and Heewoong Song and Dongwook Jang and Junghyun Shin and Hyunsik Kim and Chang-Ki Baek and Hajun Jeong and Jongchan Yoon and Seung-Kyun Lim and Kyo Yun Lee and Young Jun Koo and Myeong-Jae Park and Joohwan Cho and Jonghwan Kim},
year = {2024},
doi = {10.1109/ISSCC49657.2024.10454440},
url = {https://doi.org/10.1109/ISSCC49657.2024.10454440},
researchr = {https://researchr.org/publication/LeeCLLPOJJCLYCOMPCKYKJKLJPKKOKJKKKYYL24},
cites = {0},
citedby = {0},
pages = {238-240},
booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2024, San Francisco, CA, USA, February 18-22, 2024},
publisher = {IEEE},
isbn = {979-8-3503-0620-0},
}