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Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang. Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. Microelectronics Reliability, 52(9-10):1949-1952, 2012. [doi]

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