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Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell

Kuo-Fu Lee, Yiming Li, Tien-Yeh Li, Zhong-Cheng Su, Chin-Hong Hwang. Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell. Microelectronics Reliability, 50(5):647-651, 2010. [doi]

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