Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

Yi-Mu Lee, Yider Wu, Gerald Lucovsky. Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. Microelectronics Reliability, 44(2):207-212, 2004. [doi]

Authors

Yi-Mu Lee

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Yider Wu

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Gerald Lucovsky

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