Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress

Yi-Mu Lee, Yider Wu, Gerald Lucovsky. Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. Microelectronics Reliability, 44(2):207-212, 2004. [doi]

Abstract

Abstract is missing.