A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices

M. Leicht, G. Fritzer, B. Basnar, S. Golka, J. Smoliner. A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices. Microelectronics Reliability, 41(9-10):1535-1537, 2001.

@article{LeichtFBGS01,
  title = {A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices},
  author = {M. Leicht and G. Fritzer and B. Basnar and S. Golka and J. Smoliner},
  year = {2001},
  tags = {analysis},
  researchr = {https://researchr.org/publication/LeichtFBGS01},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {41},
  number = {9-10},
  pages = {1535-1537},
}