A 1.05V 1.6mW 0.45°C 3σ-resolution ΔΣ-based temperature sensor with parasitic-resistance compensation in 32nm CMOS - researchr publication authors

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Y. William Li, Hasnain Lakdawala, Arijit Raychowdhury, Greg Taylor, K. Soumyanath. A 1.05V 1.6mW 0.45°C 3σ-resolution ΔΣ-based temperature sensor with parasitic-resistance compensation in 32nm CMOS. In IEEE International Solid-State Circuits Conference, ISSCC 2009, Digest of Technical Papers, San Francisco, CA, USA, 8-12 February, 2009. pages 340-341, IEEE, 2009. [doi]

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