A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7dBm Output Power

Shuyang Li, Xingcun Li, Huibo Wu, Wenhua Chen. A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7dBm Output Power. In IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023. pages 366-367, IEEE, 2023. [doi]

@inproceedings{LiLWC23,
  title = {A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7dBm Output Power},
  author = {Shuyang Li and Xingcun Li and Huibo Wu and Wenhua Chen},
  year = {2023},
  doi = {10.1109/ISSCC42615.2023.10067586},
  url = {https://doi.org/10.1109/ISSCC42615.2023.10067586},
  researchr = {https://researchr.org/publication/LiLWC23},
  cites = {0},
  citedby = {0},
  pages = {366-367},
  booktitle = {IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023},
  publisher = {IEEE},
  isbn = {978-1-6654-9016-0},
}