Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study - researchr publication authors

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Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu 0001, Tingao Tang. Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study. In 2011 IEEE 9th International Conference on ASIC, ASICON 2011, Xiamen, China, October 25-28, 2011. pages 735-738, IEEE, 2011. [doi]

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