Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu 0001, Tingao Tang. Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study. In 2011 IEEE 9th International Conference on ASIC, ASICON 2011, Xiamen, China, October 25-28, 2011. pages 735-738, IEEE, 2011. [doi]
@inproceedings{LiMH0T11, title = {Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study}, author = {Peicheng Li and Guanghui Mei and Guangxi Hu and Ran Liu 0001 and Tingao Tang}, year = {2011}, doi = {10.1109/ASICON.2011.6157310}, url = {http://dx.doi.org/10.1109/ASICON.2011.6157310}, researchr = {https://researchr.org/publication/LiMH0T11}, cites = {0}, citedby = {0}, pages = {735-738}, booktitle = {2011 IEEE 9th International Conference on ASIC, ASICON 2011, Xiamen, China, October 25-28, 2011}, publisher = {IEEE}, isbn = {978-1-61284-192-2}, }