High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5-19-dBm Psat and 14.2-12.1% Peak PAE in 45-nm CMOS RFSOI

Siwei Li, Gabriel M. Rebeiz. High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5-19-dBm Psat and 14.2-12.1% Peak PAE in 45-nm CMOS RFSOI. J. Solid-State Circuits, 57(5):1332-1343, 2022. [doi]

@article{LiR22-3,
  title = {High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5-19-dBm Psat and 14.2-12.1% Peak PAE in 45-nm CMOS RFSOI},
  author = {Siwei Li and Gabriel M. Rebeiz},
  year = {2022},
  doi = {10.1109/JSSC.2022.3145394},
  url = {https://doi.org/10.1109/JSSC.2022.3145394},
  researchr = {https://researchr.org/publication/LiR22-3},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {57},
  number = {5},
  pages = {1332-1343},
}