Gang Li, Haisheng San, Xuyuan Chen. Charge accumulation and their relaxation in SiO2 films containing silicon nanocrystals. In 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, January 20-23, 2010. pages 736-739, IEEE, 2010. [doi]
@inproceedings{LiSC10-4, title = {Charge accumulation and their relaxation in SiO2 films containing silicon nanocrystals}, author = {Gang Li and Haisheng San and Xuyuan Chen}, year = {2010}, doi = {10.1109/NEMS.2010.5592259}, url = {http://dx.doi.org/10.1109/NEMS.2010.5592259}, researchr = {https://researchr.org/publication/LiSC10-4}, cites = {0}, citedby = {0}, pages = {736-739}, booktitle = {5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, January 20-23, 2010}, publisher = {IEEE}, }