Z. Li, T. Schram, L. Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, K. De Meyer. Mechanism of O::2::-anneal induced V::fb:: shifts of Ru gated stacks. Microelectronics Reliability, 47(4-5):518-520, 2007. [doi]
Abstract is missing.