Process improvement of 0.13mum Cu/Low K (Black Diamond:::TM:::) dual damascene interconnection

H. Y. Li, Y. J. Su, C. F. Tsang, S. M. Sohan, V. N. Bliznetsov, L. Zhang. Process improvement of 0.13mum Cu/Low K (Black Diamond:::TM:::) dual damascene interconnection. Microelectronics Reliability, 45(7-8):1134-1143, 2005. [doi]

@article{LiSTSBZ05,
  title = {Process improvement of 0.13mum Cu/Low K (Black Diamond:::TM:::) dual damascene interconnection},
  author = {H. Y. Li and Y. J. Su and C. F. Tsang and S. M. Sohan and V. N. Bliznetsov and L. Zhang},
  year = {2005},
  doi = {10.1016/j.microrel.2004.11.057},
  url = {http://dx.doi.org/10.1016/j.microrel.2004.11.057},
  tags = {C++},
  researchr = {https://researchr.org/publication/LiSTSBZ05},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {45},
  number = {7-8},
  pages = {1134-1143},
}