B. Li, J. Wu, J. Gao, Y. Kuang, J. Li, X. Zhao, K. Zhao, Z. Han, J. Luo. The total ionizing dose response of a DSOI 4Kb SRAM. Microelectronics Reliability, 76:714-718, 2017. [doi]
@article{LiWGKLZZHL17,
title = {The total ionizing dose response of a DSOI 4Kb SRAM},
author = {B. Li and J. Wu and J. Gao and Y. Kuang and J. Li and X. Zhao and K. Zhao and Z. Han and J. Luo},
year = {2017},
doi = {10.1016/j.microrel.2017.07.068},
url = {https://doi.org/10.1016/j.microrel.2017.07.068},
researchr = {https://researchr.org/publication/LiWGKLZZHL17},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {76},
pages = {714-718},
}