Behavior Modeling and Analysis of High-Voltage SiC MOSFET Considering Temperature Effect - researchr publication authors

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Weiguo Li, Yunfei Xu, Qingping Li, Yi Hao, Guoliang Zhao, Haijun Liu. Behavior Modeling and Analysis of High-Voltage SiC MOSFET Considering Temperature Effect. In 49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023, Singapore, October 16-19, 2023. pages 1-7, IEEE, 2023. [doi]

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