Behavior Modeling and Analysis of High-Voltage SiC MOSFET Considering Temperature Effect

Weiguo Li, Yunfei Xu, Qingping Li, Yi Hao, Guoliang Zhao, Haijun Liu. Behavior Modeling and Analysis of High-Voltage SiC MOSFET Considering Temperature Effect. In 49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023, Singapore, October 16-19, 2023. pages 1-7, IEEE, 2023. [doi]

@inproceedings{LiXLHZL23,
  title = {Behavior Modeling and Analysis of High-Voltage SiC MOSFET Considering Temperature Effect},
  author = {Weiguo Li and Yunfei Xu and Qingping Li and Yi Hao and Guoliang Zhao and Haijun Liu},
  year = {2023},
  doi = {10.1109/IECON51785.2023.10311758},
  url = {https://doi.org/10.1109/IECON51785.2023.10311758},
  researchr = {https://researchr.org/publication/LiXLHZL23},
  cites = {0},
  citedby = {0},
  pages = {1-7},
  booktitle = {49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023, Singapore, October 16-19, 2023},
  publisher = {IEEE},
  isbn = {979-8-3503-3182-0},
}