Leakage power reduction for deeply-scaled FinFET circuits operating in multiple voltage regimes using fine-grained gate-length biasing technique

Ji Li, Qing Xie, Yanzhi Wang, Shahin Nazarian, Massoud Pedram. Leakage power reduction for deeply-scaled FinFET circuits operating in multiple voltage regimes using fine-grained gate-length biasing technique. In Wolfgang Nebel, David Atienza, editors, Proceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition, DATE 2015, Grenoble, France, March 9-13, 2015. pages 1579-1582, ACM, 2015. [doi]

Abstract

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