Yue Li, Ruiyuan Yin, Ming Tao, Yilong Hao, Cheng P. Wen, Maojun Wang, Jie Zhang, Xuelin Yang, Bo Shen. High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-3, IEEE, 2019. [doi]
Abstract is missing.