A HfO2 Ferroelectric Capacitor based 10T2C High Reliability Non-Volatile SRAM for Low Power IoT Applications

Jing Li, Yulin Zhao, Bo Peng, Xuanzhi Liu, Qiao Hu, Sheng Dai, Jianguo Yang, Yuejun Zhang. A HfO2 Ferroelectric Capacitor based 10T2C High Reliability Non-Volatile SRAM for Low Power IoT Applications. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

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