Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric

Ye Liang, Yuanlei Zhang, Yutao Cai, Zhaoyi Wang, Yinchao Zhao, Huiqing Wen, Wen Liu. Threshold Voltage Instability in D-mode AlGaN/GaN MIS-HEMTs with Al2O3 Gate Dielectric. In International Conference on IC Design and Technology, ICICDT 2021, Dresden, Germany, September 15-17, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

Abstract is missing.