High Restore Yield NVSRAM Structures With Dual Complementary RRAM Devices for High-Speed Applications

Zhiting Lin, Min Chen, Peng Sun, Xiulong Wu, Qiang Zhao, Wenjuan Lu, Chunyu Peng. High Restore Yield NVSRAM Structures With Dual Complementary RRAM Devices for High-Speed Applications. IEEE Trans. VLSI Syst., 31(4):522-531, April 2023. [doi]

@article{LinCSWZLP23,
  title = {High Restore Yield NVSRAM Structures With Dual Complementary RRAM Devices for High-Speed Applications},
  author = {Zhiting Lin and Min Chen and Peng Sun and Xiulong Wu and Qiang Zhao and Wenjuan Lu and Chunyu Peng},
  year = {2023},
  month = {April},
  doi = {10.1109/TVLSI.2023.3242300},
  url = {https://doi.org/10.1109/TVLSI.2023.3242300},
  researchr = {https://researchr.org/publication/LinCSWZLP23},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. VLSI Syst.},
  volume = {31},
  number = {4},
  pages = {522-531},
}