Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi. Read-out schemes for a CNTFET-based crossbar memory. In R. Iris Bahar, Fabrizio Lombardi, David Atienza, Erik Brunvand, editors, Proceedings of the 20th ACM Great Lakes Symposium on VLSI 2009, Providence, Rhode Island, USA, May 16-18 2010. pages 167-170, ACM, 2010. [doi]
@inproceedings{LinKL10,
title = {Read-out schemes for a CNTFET-based crossbar memory},
author = {Sheng Lin and Yong-Bin Kim and Fabrizio Lombardi},
year = {2010},
doi = {10.1145/1785481.1785522},
url = {http://doi.acm.org/10.1145/1785481.1785522},
tags = {rule-based},
researchr = {https://researchr.org/publication/LinKL10},
cites = {0},
citedby = {0},
pages = {167-170},
booktitle = {Proceedings of the 20th ACM Great Lakes Symposium on VLSI 2009, Providence, Rhode Island, USA, May 16-18 2010},
editor = {R. Iris Bahar and Fabrizio Lombardi and David Atienza and Erik Brunvand},
publisher = {ACM},
isbn = {978-1-4503-0012-4},
}