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Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Ray-Ming Lin, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, Meng-Chyi Wu. Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs. Microelectronics Reliability, 50(5):679-682, 2010. [doi]

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