W-Band Divide-by-3 Injection-Locked Frequency Divider Using Stacked Cross-Coupled Transistors in 90 nm CMOS - researchr publication

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Yo-Sheng Lin, Kai-Siang Lan, Yu-Ching Lin. W-Band Divide-by-3 Injection-Locked Frequency Divider Using Stacked Cross-Coupled Transistors in 90 nm CMOS. In IEEE Radio and Wireless Symposium, RWS 2019, Orlando, FL, USA, January 20-23, 2019. pages 1-4, IEEE, 2019. [doi]

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