A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology - researchr publication authors

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Yo-Sheng Lin, Chien-Chin Wang, Jen-How Lee. A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology. In 2014 IEEE Radio and Wireless Symposium, RWS 2014, Newport Beach, CA, USA, January 19-23, 2014. pages 208-210, IEEE, 2014. [doi]

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