A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology

Yo-Sheng Lin, Chien-Chin Wang, Jen-How Lee. A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology. In 2014 IEEE Radio and Wireless Symposium, RWS 2014, Newport Beach, CA, USA, January 19-23, 2014. pages 208-210, IEEE, 2014. [doi]

@inproceedings{LinWL14,
  title = {A 9.96 mW 3.24±0.5 dB NF 1.9∼22.5 GHz wideband low-noise amplifier using 90 nm CMOS technology},
  author = {Yo-Sheng Lin and Chien-Chin Wang and Jen-How Lee},
  year = {2014},
  doi = {10.1109/RWS.2014.6830072},
  url = {http://dx.doi.org/10.1109/RWS.2014.6830072},
  researchr = {https://researchr.org/publication/LinWL14},
  cites = {0},
  citedby = {0},
  pages = {208-210},
  booktitle = {2014 IEEE Radio and Wireless Symposium, RWS 2014, Newport Beach, CA, USA, January 19-23, 2014},
  publisher = {IEEE},
}