Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse

Yang Liu, ChangChun Chai, Qingyang Fan, Chunlei Shi, Xiaowen Xi, Xinhai Yu, Yintang Yang. Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse. Microelectronics Reliability, 66:32-37, 2016. [doi]

@article{LiuCFSXYY16,
  title = {Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse},
  author = {Yang Liu and ChangChun Chai and Qingyang Fan and Chunlei Shi and Xiaowen Xi and Xinhai Yu and Yintang Yang},
  year = {2016},
  doi = {10.1016/j.microrel.2016.09.002},
  url = {http://dx.doi.org/10.1016/j.microrel.2016.09.002},
  researchr = {https://researchr.org/publication/LiuCFSXYY16},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {66},
  pages = {32-37},
}