Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, HyunWoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park. Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 2, IEEE, 2015. [doi]
@inproceedings{LiuSKCLKKJJKHPP15,
title = {Systematical study of 14nm FinFET reliability: From device level stress to product HTOL},
author = {Changze Liu and Hyun-Chul Sagong and Hyejin Kim and Seungjin Choo and HyunWoo Lee and Yoohwan Kim and Hyunjin Kim and Bisung Jo and Minjung Jin and Jinjoo Kim and Sangsu Ha and Sangwoo Pae and Jongwoo Park},
year = {2015},
doi = {10.1109/IRPS.2015.7112693},
url = {http://dx.doi.org/10.1109/IRPS.2015.7112693},
researchr = {https://researchr.org/publication/LiuSKCLKKJJKHPP15},
cites = {0},
citedby = {0},
pages = {2},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7362-3},
}