Hongxia Liu, Xing Wang. Impact of Al+ implantation on the Switching Characteristics of Al2O3/La2O3/Al2O3 multilayer RRAM devices. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{LiuW19-34,
title = {Impact of Al+ implantation on the Switching Characteristics of Al2O3/La2O3/Al2O3 multilayer RRAM devices},
author = {Hongxia Liu and Xing Wang},
year = {2019},
doi = {10.1109/ICICDT.2019.8790907},
url = {https://doi.org/10.1109/ICICDT.2019.8790907},
researchr = {https://researchr.org/publication/LiuW19-34},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019},
publisher = {IEEE},
isbn = {978-1-7281-1853-6},
}