Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

Hongxia Liu, Shulong Wang, Yue Hao. Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity. Microelectronics Reliability, 51(5):909-913, 2011. [doi]

Authors

Hongxia Liu

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Shulong Wang

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Yue Hao

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