Hongxia Liu, Shulong Wang, Yue Hao. Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity. Microelectronics Reliability, 51(5):909-913, 2011. [doi]
@article{LiuWH11,
title = {Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity},
author = {Hongxia Liu and Shulong Wang and Yue Hao},
year = {2011},
doi = {10.1016/j.microrel.2010.12.005},
url = {http://dx.doi.org/10.1016/j.microrel.2010.12.005},
tags = {modeling},
researchr = {https://researchr.org/publication/LiuWH11},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {51},
number = {5},
pages = {909-913},
}