Jian Liu, Ke Wang, Xiaolong Zhou, Xiaopeng Xiao, Yongming Tang, Zhongyuan Ma, Kunji Chen. Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-3, IEEE, 2021. [doi]
@inproceedings{LiuWZXTMC21,
title = {Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition},
author = {Jian Liu and Ke Wang and Xiaolong Zhou and Xiaopeng Xiao and Yongming Tang and Zhongyuan Ma and Kunji Chen},
year = {2021},
doi = {10.1109/ASICON52560.2021.9620227},
url = {https://doi.org/10.1109/ASICON52560.2021.9620227},
researchr = {https://researchr.org/publication/LiuWZXTMC21},
cites = {0},
citedby = {0},
pages = {1-3},
booktitle = {14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021},
editor = {Fan Ye and Ting-Ao Tang},
publisher = {IEEE},
isbn = {978-1-6654-3867-4},
}