Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition

Jian Liu, Ke Wang, Xiaolong Zhou, Xiaopeng Xiao, Yongming Tang, Zhongyuan Ma, Kunji Chen. Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-3, IEEE, 2021. [doi]

Abstract

Abstract is missing.