Total-dose-induced edge effect in SOI NMOS transistors with different layouts - researchr publication authors

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Jie Liu, Jicheng Zhou, Hongwei Luo, Xuedong Kong, Yunfei En, Qian Shi, Yujuan He. Total-dose-induced edge effect in SOI NMOS transistors with different layouts. Microelectronics Reliability, 50(1):45-47, 2010. [doi]

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