RF passive device modeling and characterization in 65nm CMOS technology

Errikos Lourandakis, Stefanos Stefanou, Konstantinos Nikellis, Sotiris Bantas. RF passive device modeling and characterization in 65nm CMOS technology. In International Symposium on Quality Electronic Design, ISQED 2013, Santa Clara, CA, USA, March 4-6, 2013. pages 658-664, IEEE, 2013. [doi]

@inproceedings{LourandakisSNB13,
  title = {RF passive device modeling and characterization in 65nm CMOS technology},
  author = {Errikos Lourandakis and Stefanos Stefanou and Konstantinos Nikellis and Sotiris Bantas},
  year = {2013},
  doi = {10.1109/ISQED.2013.6523680},
  url = {http://dx.doi.org/10.1109/ISQED.2013.6523680},
  researchr = {https://researchr.org/publication/LourandakisSNB13},
  cites = {0},
  citedby = {0},
  pages = {658-664},
  booktitle = {International Symposium on Quality Electronic Design, ISQED 2013, Santa Clara, CA, USA, March 4-6, 2013},
  publisher = {IEEE},
  isbn = {978-1-4673-4951-2},
}