First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications

Hao Lu, Likun Zhou, Longge Deng, Ling Yang 0003, Bin Hou, Xiaohua Ma, Yue Hao. First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. In 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2022, Xi'an, China, October 28-30, 2022. pages 30-31, IEEE, 2022. [doi]

@inproceedings{LuZD0HMH22,
  title = {First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications},
  author = {Hao Lu and Likun Zhou and Longge Deng and Ling Yang 0003 and Bin Hou and Xiaohua Ma and Yue Hao},
  year = {2022},
  doi = {10.1109/ICTA56932.2022.9962999},
  url = {https://doi.org/10.1109/ICTA56932.2022.9962999},
  researchr = {https://researchr.org/publication/LuZD0HMH22},
  cites = {0},
  citedby = {0},
  pages = {30-31},
  booktitle = {2022 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2022, Xi'an, China, October 28-30, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-9269-0},
}