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Publications by 'Ling Yang 0003'

Publications

Viewing Publication 1 - 7 from 7

2024

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structureChunzhou Shi, Ling Yang 0003, Meng Zhang, Hao Lu, Mei Wu, Bin Hou, Xuerui Niu, Qian Yu, Wenliang Liu, Wenze Gao, Xiaohua Ma, Yue Hao. chinaf, 67(4), 2024. [doi]

Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under biasQing Zhu, Zhenni Wang, Yuxiang Wei, Ling Yang 0003, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma. chinaf, 67(1), 2024. [doi]

2022

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration methodSiyu Liu, Xiaohua Ma, Jie-Jie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang 0003, Yue Hao. chinaf, 65(10), 2022. [doi]

First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF ApplicationsHao Lu, Likun Zhou, Longge Deng, Ling Yang 0003, Bin Hou, Xiaohua Ma, Yue Hao. icta3 2022: 30-31 [doi]

A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver CircuitsYuchen Wang, Xiaohua Ma, Yang Lu, Bochao Zhao, Ziyue Zhao, Chupeng Yi, Ling Yang 0003, Jiangyi Shi, Yue Hao. tim, 71:1-9, 2022. [doi]

2021

Recent progress of integrated circuits and optoelectronic chipsYue Hao, ShuiYing Xiang, Genquan Han, JinCheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang 0003, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, YiMao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, XiHua Zou, Lianshan Yan, Ming Li. chinaf, 64(10), 2021. [doi]

Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content BarrierHao Lu, Xiaohua Ma, Bin Hou, Ling Yang 0003, Teng Huo, Zeyan Si, Yue Hao. icta3 2021: 78-79 [doi]

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