Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

Siyu Liu, Xiaohua Ma, Jie-Jie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang 0003, Yue Hao. Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Science in China Series F: Information Sciences, 65(10), 2022. [doi]

Abstract

Abstract is missing.