Low Parasitic-Inductance Packaging of a 650 V/150 A Half-Bridge Module Using Enhancement-Mode Gallium-Nitride High Electron Mobility Transistors

Shengchang Lu, Tianyu Zhao, Zichen Zhang, Khai D. T. Ngo, Rolando Burgos, Guo-Quan Lu. Low Parasitic-Inductance Packaging of a 650 V/150 A Half-Bridge Module Using Enhancement-Mode Gallium-Nitride High Electron Mobility Transistors. IEEE Transactions on Industrial Electronics, 70(1):344-351, 2023. [doi]

Abstract

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