AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices - researchr publication authors

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James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer. AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]

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