Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution

Weifeng Lyu, Ying Han, Caiyun Zhang, Weijie Wei, Dengke Chen. Estimation of Drain-Induced Barrier Lowering Variation Due to Random Dopant Fluctuation Effect in Nanometer MOSFETs by Gamma Distribution. In Antonio J. Tallón-Ballesteros, Estefanía Cortés-Ancos, Diego A. López García, editors, Electronics, Communications and Networks - Proceedings of the 13th International Conference (CECNet 2023), Macao, China, 17-20 November 2023. Volume 381 of Frontiers in Artificial Intelligence and Applications, pages 215-223, IOS Press, 2023. [doi]

Abstract

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