Sarath Chandran G. M, Mohit D. Ganeriwala, Nihar Ranjan Mohapatra. Capacitance and Surface Potential Model for III-V Double-Gate FET. In 2nd International Symposium on Devices, Circuits and Systems, ISDCS 2019, Higashi-Hiroshima, Japan, March 6-8, 2019. pages 1-5, IEEE, 2019. [doi]
Abstract is missing.