T. P. Ma. Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition. Microelectronics Journal, 34(5-8):363-370, 2003. [doi]
@article{Ma03:3, title = {Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition}, author = {T. P. Ma}, year = {2003}, doi = {10.1016/S0026-2692(03)00026-0}, url = {http://dx.doi.org/10.1016/S0026-2692(03)00026-0}, researchr = {https://researchr.org/publication/Ma03%3A3}, cites = {0}, citedby = {0}, journal = {Microelectronics Journal}, volume = {34}, number = {5-8}, pages = {363-370}, }