$f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length

Yue Ma, Sigurd Wagner, Naveen Verma, James C. Sturm. $f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length. In Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023. pages 1-2, IEEE, 2023. [doi]

@inproceedings{MaWVS23,
  title = {$f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length},
  author = {Yue Ma and Sigurd Wagner and Naveen Verma and James C. Sturm},
  year = {2023},
  doi = {10.1109/DRC58590.2023.10186903},
  url = {https://doi.org/10.1109/DRC58590.2023.10186903},
  researchr = {https://researchr.org/publication/MaWVS23},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023},
  publisher = {IEEE},
  isbn = {979-8-3503-2310-8},
}