Teng Ma, Xuefeng Yu, Jiangwei Cui, Qiwen Zheng, Hang Zhou, Dandan Su, Qi Guo. Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices. Microelectronics Reliability, 81:112-116, 2018. [doi]
@article{MaYCZZSG18,
title = {Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices},
author = {Teng Ma and Xuefeng Yu and Jiangwei Cui and Qiwen Zheng and Hang Zhou and Dandan Su and Qi Guo},
year = {2018},
doi = {10.1016/j.microrel.2017.12.016},
url = {https://doi.org/10.1016/j.microrel.2017.12.016},
researchr = {https://researchr.org/publication/MaYCZZSG18},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {81},
pages = {112-116},
}