Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi 0004, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang Ho Kim, Ken Cheah, Yee Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura. A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 336-338, IEEE, 2018. [doi]
@inproceedings{MaejimaKFTOSSSK18,
title = {A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology},
author = {Hiroshi Maejima and Kazushige Kanda and Susumu Fujimura and Teruo Takagiwa and Susumu Ozawa and Jumpei Sato and Yoshihiko Shindo and Manabu Sato and Naoaki Kanagawa and Junji Musha and Satoshi Inoue and Katsuaki Sakurai and Naohito Morozumi and Ryo Fukuda and Yuui Shimizu and Toshifumi Hashimoto and Xu Li and Yuki Shimizu and Kenichi Abe and Tadashi Yasufuku and Takatoshi Minamoto and Hiroshi Yoshihara and Takahiro Yamashita and Kazuhiko Satou and Takahiro Sugimoto and Fumihiro Kono and Mitsuhiro Abe and Tomoharu Hashiguchi and Masatsugu Kojima and Yasuhiro Suematsu and Takahiro Shimizu and Akihiro Imamoto and Naoki Kobayashi 0004 and Makoto Miakashi and Kouichirou Yamaguchi and Sanad Bushnaq and Hicham Haibi and Masatsugu Ogawa and Yusuke Ochi and Kenro Kubota and Taichi Wakui and Dong He and Weihan Wang and Hiroe Minagawa and Tomoko Nishiuchi and Hao Nguyen and Kwang Ho Kim and Ken Cheah and Yee Koh and Feng Lu and Venky Ramachandra and Srinivas Rajendra and Steve Choi and Keyur Payak and Namas Raghunathan and Spiros Georgakis and Hiroshi Sugawara and Seungpil Lee and Takuya Futatsuyama and Koji Hosono and Noboru Shibata and Toshiki Hisada and Tetsuya Kaneko and Hiroshi Nakamura},
year = {2018},
doi = {10.1109/ISSCC.2018.8310321},
url = {https://doi.org/10.1109/ISSCC.2018.8310321},
researchr = {https://researchr.org/publication/MaejimaKFTOSSSK18},
cites = {0},
citedby = {0},
pages = {336-338},
booktitle = {2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5090-4940-0},
}